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| MUR12060 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 MUR12060 VRSM V 600 VRRM V 600 Symbol IFRMS IFAVM IFAV IFRM Test Conditions TVJ=TVJM TC=70oC; rectangular, d=0.5 TC=110oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 100 126 77 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 357 0.8...1.2 6 W Nm g MUR12060 Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=70A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 3 0.75 20 1.12 1.3 0.85 3.5 0.35 0.25 35 Unit IR mA VF VTO rT RthJC RthCK RthJA trr IRM V V m K/W IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=350V; IF=80A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o 35 17 50 21 ns A FEATURES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR12060 Ultra Fast Recovery Diodes 150 A 125 IF Qr 100 TVJ=150C 7 T = 100C uC VJ V = 300V 6R 5 4 3 IF=140A IF= 70A IF= 35A 80 A TVJ= 100C 70 VR = 300V IRM 60 50 40 IF=140A IF= 70A IF= 35A 75 TVJ=100C 50 2 25 TVJ=25C 30 20 10 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 1 0 100 0 0.0 0.5 1.0 V VF 1.5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 240 ns TVJ= 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 tfr VFR 1.4 1.2 Kf 1.0 Qr 220 trr 200 IF=140A IF= 70A IF= 35A 3.0 TVJ= 100C IF = 100A us 2.5 tfr 2.0 1.5 1.0 0.5 0.0 1000 A/us 180 30 20 10 0.8 IRM 160 0.6 140 0.4 0 50 100 TVJ C 150 0 200 400 600 A/us 1000 800 -diF/dt 0 0 200 400 600 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.017 0.0184 0.1296 0.185 ti (s) 0.00038 0.0026 0.0387 0.274 D=0.7 0.5 ZthJC 0.1 0.3 0.2 0.01 0.05 Single Pulse 1 2 3 4 0.01 0.001 0.01 0.1 1s 10 t Fig. 7 Transient thermal resistance junction to case at various duty cycles |
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